40N03GP MOSFET Datasheet

40N03GP Datasheet, PDF, Equivalent


Part Number

40N03GP

Description

N-channel Enhancement-mode Power MOSFET

Manufacture

Advanced Power Electronics

Total Page 5 Pages
Datasheet
Download 40N03GP Datasheet


40N03GP
Advanced Power
Electronics Corp.
AP40N03GP-HF-3
N-channel Enhancement-mode Power MOSFET
Simple Drive Requirement
Low Gate Charge
D
Fast Switching Performance
RoHS-compliant, halogen-free
G
S
BV DSS
RDS(ON)
ID
30V
17m
40A
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, low on-resistance and cost-effectiveness.
The AP40N03GP-HF-3 is in the TO-220 through-hole package which is
used in commercial appplications where a low PCB footprint or an
attached heatsink is required. This device is well suited for low voltage
applications such as DC/DC converters and high current DC switches.
G
DS
D (tab)
TO-220 (P)
Absolute Maximum Ratings
Symbol
VDS
VGS
ID at TC=25°C
ID at TC=100°C
IDM
PD at TC=25°C
PD at TA=25°C
TSTG
TJ
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current1
Total Power Dissipation
Total Power Dissipation
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Rating
30
±20
40
30
169
50
2
-55 to 150
-55 to 150
Units
V
V
A
A
A
W
W
°C
°C
Symbol
Rthj-c
Rthj-a
Parameter
Maximum Thermal Resistance, Junction-case
Maximum Thermal Resistance, Junction-ambient
Value
2.5
62
Units
°C/W
°C/W
Ordering Information
AP40N03GP-HF-3TB : in RoHS-compliant halogen-free TO-220, shipped in tubes (50pcs/tube)
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
200910094-3 1/5

40N03GP
Advanced Power
Electronics Corp.
AP40N03GP-HF-3
Electrical Specifications at Tj=25°C (unless otherwise specified)
Symbol
BVDSS
BV DSS/Tj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Test Conditions
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25°C, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=20A
VGS=4.5V, ID=16A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
VDS=10V, ID=20A
Drain-Source Leakage Current
VDS=30V, VGS=0V
Drain-Source Leakage Current (Tj=125oC) VDS=24V,VGS=0V
Gate-Source Leakage
Total Gate Charge2
VGS= ±20V, VDS=0V
ID=20A
Gate-Source Charge
VDS=24V
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VGS=5V
VDS=15V
Rise Time
ID=20A
Turn-off Delay Time
RG=3.3, VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=0.75
VGS=0V
VDS=25V
f=1.0MHz
Min. Typ. Max. Units
30 - - V
- 0.037 - V/°C
- 14 17 m
- 20 23 m
1 - 3V
- 26 -
S
- - 1 uA
- - 250 uA
- - ±100 nA
- 17 - nC
- 3 - nC
- 10 - nC
- 7.2 - ns
- 60 - ns
- 22.5 - ns
- 10 -
- 800 -
- 380 -
- 133 -
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
Test Conditions
IS
Continuous Source Current ( Body Diode )
VD=VG=0V , VS=1.3V
ISM Pulsed Source Current ( Body Diode )1
VSD Forward On Voltage2
Tj=25°C, IS=40A, VGS=0V
Notes:
1. Pulse width limited by maximum junction temperature.
2. Pulse test
Min. Typ. Max. Units
- - 40 A
- - 169 A
- - 1.3 V
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
©2012 Advanced Power Electronics Corp. USA
www.a-powerusa.com
2/5


Features Advanced Power Electronics Corp. AP40N0 3GP-HF-3 N-channel Enhancement-mode Po wer MOSFET Simple Drive Requirement Lo w Gate Charge D Fast Switching Perfor mance RoHS-compliant, halogen-free G S BV DSS RDS(ON) ID 30V 17mΩ 40A D escription Advanced Power MOSFETs from APEC provide the designer with the bes t combination of fast switching, low on -resistance and cost-effectiveness. Th e AP40N03GP-HF-3 is in the TO-220 throu gh-hole package which is used in commer cial appplications where a low PCB foot print or an attached heatsink is requir ed. This device is well suited for low voltage applications such as DC/DC conv erters and high current DC switches. G DS D (tab) TO-220 (P) Absolute Maxim um Ratings Symbol VDS VGS ID at TC=25 C ID at TC=100°C IDM PD at TC=25°C P D at TA=25°C TSTG TJ Parameter Drain- Source Voltage Gate-Source Voltage Cont inuous Drain Current Continuous Drain C urrent Pulsed Drain Current1 Total Powe r Dissipation Total Power Dissipation Storage Temperature Range.
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