Document
STN8205D
Dual N Channel Enhancement Mode MOSFET
5.0A
DESCRIPTION STN8205D is the dual N-Channel enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, such as notebook computer power management and other battery powered circuits, where high-side switching is required.
PIN CONFIGURATION TSOP-6
G1 D G2
STN8205 SYA
FEATURE
z 20V/4.0A, R =DS(ON) 30m-ohm@VGS =4.5V z 20V/3.4A, RDS(ON) =42m-ohm@VGS =2.5V z Super high density cell design for extremely
low RDS(ON) z Exceptional low on-resistance and maximum
DC current capability z TSOP-6 package design
S1 D S2
S:Subcontractor Y: Year A: Week Code
ORDERING INFORMATION
Part Number
Package
Part Marking
STN8205DST6RG
TSOP-6
SYA
※ Week Code Code : A ~ Z(1~26) ; a ~ z(27~52) ※ ST8205DST6RG ST6 : TSOP-6; R: Tape Reel ; G: Pb – F.