TOSHIBA Transistor Silicon NPN Epitaxial Type
2SC5906
High-Speed Switching Applications DC-DC Converter Applications Str...
TOSHIBA
Transistor Silicon
NPN Epitaxial Type
2SC5906
High-Speed Switching Applications DC-DC Converter Applications Strobe Applications
2SC5906
Unit: mm
High DC current gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = 0.2 V (max) High-speed switching: tf = 25 ns (typ.)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
DC t = 10 s
Junction temperature
Storage temperature range
VCBO VCEX VCEO VEBO
IC ICP IB
PC (Note 1)
Tj Tstg
50 50 30 7 4 7 0.4 0.8 1.25 150 −55 to 150
V V V V
A
A
W
°C °C
JEDEC
―
JEITA
―
TOSHIBA
2-3S1C
Weight: 0.01 g (typ.)
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm2)
Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/vol...
