C5906

Silicon NPN transistor epitaxial type C5906 C5906 [ Applications ] High voltage, High current [ Feature ] High voltage VCEO= 170V High current gain charactristic Low collector-emitter saturation voltage VCE(sat)= 0.45V(Max.) at IC/IB= 2A/200mA Fast-switching speed [ Absolute maximum ratings (Ta=25C) ] Characteristic Symbol Maximum ratings Collector-base voltage VCBO 200 Collector-emitter voltage VCEO 170 Emitter-base voltage VEBO 6 Collector current IC 5 Junction temperature Tj 150 Storage temperature Tstg -55 to 150 Unit V V V A C C [ Electrical characteristics (Ta=25C) ] Characteristic Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 200 - - V IC= 1mA Collector-emitter breakdown voltage BVCEO 170 - - V IC= 20mA Emitter-base breakdown voltage BVEBO 6 - - V IE= 1mA Collector cut-off current ICBO - - 10 uA VCB= 100V DC current gain 1 hFE 1 40 - - - VCE= 5V, IC= 500mA DC current gain 2 hFE 2 40 - - - VCE= 5V, I...