DatasheetsPDF.com

SEMiX703GAL126HDs Dataheets PDF



Part Number SEMiX703GAL126HDs
Manufacturers Semikron International
Logo Semikron International
Description IGBT
Datasheet SEMiX703GAL126HDs DatasheetSEMiX703GAL126HDs Datasheet (PDF)

SEMiX703GAL126HDs SEMiX®3s Trench IGBT Modules SEMiX703GAL126HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design GAL © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICRM VGES tpsc Tj Tj = 150.

  SEMiX703GAL126HDs   SEMiX703GAL126HDs



Document
SEMiX703GAL126HDs SEMiX®3s Trench IGBT Modules SEMiX703GAL126HDs Preliminary Data Features • Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature coefficient • High short circuit capability • UL recognised file no. E63532 Typical Applications • AC inverter drives • UPS • Electronic Welding Remarks • Case temperatur limited to TC=125°C max. • Not for new design GAL © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICRM VGES tpsc Tj Tj = 150°C ICRM = 2xICnom VCC = 600V VGE ≤ 20V Tj = 125°C VCES ≤ 1200V Tc = 25°C Tc = 80°C Inverse diode IF Tj = 150°C Tc = 25°C Tc = 80°C IFRM IFRM = 2xIFnom IFSM tp = 10ms, half sine wave, Tj = 25°C Tj Freewheeling diode IF Tj = 150°C Tc = 25°C Tc = 80°C IFRM IFRM = 2xIFnom IFSM tp = 10ms, half sine wave, Tj = 25°C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 60s Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies C.


CD1619CB SEMiX703GAL126HDs SEMiX703GAR126HDs


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)