Document
SEMiX703GAL126HDs
SEMiX®3s
Trench IGBT Modules
SEMiX703GAL126HDs Preliminary Data Features
• Homogeneous Si • Trench = Trenchgate technology • VCE(sat) with positive temperature
coefficient • High short circuit capability • UL recognised file no. E63532
Typical Applications
• AC inverter drives • UPS • Electronic Welding
Remarks
• Case temperatur limited to TC=125°C max.
• Not for new design
GAL © by SEMIKRON
Absolute Maximum Ratings
Symbol Conditions
IGBT VCES IC
ICRM VGES
tpsc
Tj
Tj = 150°C ICRM = 2xICnom
VCC = 600V VGE ≤ 20V Tj = 125°C VCES ≤ 1200V
Tc = 25°C Tc = 80°C
Inverse diode
IF
Tj = 150°C
Tc = 25°C Tc = 80°C
IFRM
IFRM = 2xIFnom
IFSM tp = 10ms, half sine wave, Tj = 25°C
Tj
Freewheeling diode
IF
Tj = 150°C
Tc = 25°C Tc = 80°C
IFRM
IFRM = 2xIFnom
IFSM tp = 10ms, half sine wave, Tj = 25°C
Tj
Module
It(RMS) Tstg Visol
AC sinus 50Hz, t = 60s
Characteristics
Symbol Conditions
IGBT VCE(sat)
VCE0
rCE
VGE(th) ICES
Cies C.