SEMiX703GAR126HDs

SEMiX703GAR126HDs SEMiX®3s Trench IGBT Modules SEMiX703GAR126HDs Preliminary Data Features Homogeneous Si Trench = Trenchgate technology VCE(sat) with positive temperature coefficient High short circuit capability UL recognised file no. E63532 Typical Applications AC inverter drives UPS Electronic Welding Remarks Case temperatur limited to TC=125°C max. Not for new design GAR © by SEMIKRON Absolute Maximum Ratings Symbol Conditions IGBT VCES IC ICRM VGES tpsc Tj Tj = 150°C ICRM = 2xICnom VCC = 600V VGE ≤ 20V Tj = 125°C VCES ≤ 1200V Tc = 25°C Tc = 80°C Inverse diode IF Tj = 150°C Tc = 25°C Tc = 80°C IFRM IFRM = 2xIFnom IFSM tp = 10ms, half sine wave, Tj = 25°C Tj Freewheeling diode IF Tj = 150°C Tc = 25°C Tc = 80°C IFRM IFRM = 2xIFnom IFSM tp = 10ms, half sine wave, Tj = 25°C Tj Module It(RMS) Tstg Visol AC sinus 50Hz, t = 60s Characteristics Symbol Conditions IGBT VCE(sat) VCE0 rCE VGE(th) ICES Cies C...