NCE65R260F MOSFET Datasheet

NCE65R260F Datasheet, PDF, Equivalent


Part Number

NCE65R260F

Description

N-Channel Super Junction Power MOSFET

Manufacture

NCE Power

Total Page 10 Pages
Datasheet
Download NCE65R260F Datasheet


NCE65R260F
NCE65R260D,NCE65R260,NCE65R260F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low
gate charge. This super junction MOSFET fits the industry’s
AC-DC SMPS requirements for PFC, AC/DC power
conversion, and industrial power applications.
Features
New technology for high voltage device
Low on-resistance and low conduction losses
Small package
Ultra Low Gate Charge cause lower driving requirements
100% Avalanche Tested
ROHS compliant
VDS
RDS(ON) MAX
ID
650 V
260 m
15 A
Application
Power factor correctionPFC
Switched mode power supplies(SMPS)
Uninterruptible Power SupplyUPS
Schematic diagram
Package Marking And Ordering Information
Device
Device Package
Marking
NCE65R260D
TO-263
NCE65R260D
NCE65R260
TO-220
NCE65R260
NCE65R260F
TO-220F
NCE65R260F
TO-263
TO-220
TO-220F
Table 1. Absolute Maximum Ratings (TC=25)
Parameter
Symbol
Drain-Source Voltage (VGS=0V
Gate-Source Voltage (VDS=0V)
Continuous Drain Current at Tc=25°C
Continuous Drain Current at Tc=100°C
Pulsed drain current (Note 1)
Maximum Power Dissipation(Tc=25)
Derate above 25°C
Single pulse avalanche energy (Note 2)
Avalanche current(Note 1)
Repetitive Avalanche energy tAR limited by Tjmax
(Note 1)
VDS
VGS
ID (DC)
ID (DC)
IDM (pluse)
PD
EAS
IAR
EAR
NCE65R260D
NCE65R260F
NCE65R260
650
±30
15 15*
10 10*
45 45*
145 33.5
1.16 0.268
370
7.5
0.8
Unit
V
V
A
A
A
W
W/°C
mJ
A
mJ
Wuxi NCE Power Semiconductor Co., Ltd
Page 1
http://www.ncepower.com
v1.0

NCE65R260F
NCE65R260D,NCE65R260,NCE65R260F
Parameter
Drain Source voltage slope, VDS 480 V,
Reverse diode dv/dtVDS 480 V,ISD<ID
Operating Junction and Storage Temperature Range
* limited by maximum junction temperature
Symbol
dv/dt
dv/dt
TJ,TSTG
NCE65R260D
NCE65R260F
NCE65R260
50
15
-55...+150
Unit
V/ns
V/ns
°C
Table 2. Thermal Characteristic
Parameter
Symbol
NCE65R260D
NCE65R260
Thermal ResistanceJunction-to-CaseMaximum
RthJC
0.86
Thermal ResistanceJunction-to-Ambient Maximum
RthJA
62
Table 3. Electrical Characteristics (TA=25unless otherwise noted)
NCE65R260F
3.73
80
Unit
°C /W
°C /W
Parameter
Symbol
Condition
Min Typ Max Unit
On/off states
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current(Tc=25)
Zero Gate Voltage Drain Current(Tc=125)
Gate-Body Leakage Current
Gate Threshold Voltage
Drain-Source On-State Resistance
BVDSS
IDSS
IDSS
IGSS
VGS(th)
RDS(ON)
VGS=0V ID=250μA
VDS=650V,VGS=0V
VDS=650V,VGS=0V
VGS=±30V,VDS=0V
VDS=VGS,ID=250μA
VGS=10V, ID=8A
650
1
100
±100
2.5 3
3.5
230 260
V
μA
μA
nA
V
m
Dynamic Characteristics
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Intrinsic gate resistance
gFS VDS = 20V, ID = 8A
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Qg
Qgs
VDS=480V,ID=15A,
VGS=10V
Qgd
RG f = 1 MHz open drain
11
1360
115
4.8
29
6.5
12
10
45
S
pF
pF
pF
nC
nC
nC
Switching times
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
td(on)
tr
td(off)
tf
VDD=380V,ID=8A,
RG=5.5,VGS=10V
10
5
55 75
4.5 10
nS
nS
nS
nS
Source- Drain Diode Characteristics
Source-drain current(Body Diode)
Pulsed Source-drain current(Body Diode)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Peak Reverse Recovery Current
ISD
ISDM
TC=25°C
VSD Tj=25°C,ISD=8A,VGS=0V
trr
Qrr Tj=25°C,IF=8A,di/dt=100A/μs
Irrm
15
45
0.9 1.2
270
3.3
24
A
A
V
nS
uC
A
Notes 1.Repetitive Rating: Pulse width limited by maximum junction temperature
2. Tj=25,VDD=50V,VG=10V, RG=25
Wuxi NCE Power Semiconductor Co., Ltd
Page 2
http://www.ncepower.com
v1.0


Features NCE65R260D,NCE65R260,NCE65R260F N-Chann el Super Junction Power MOSFET Ⅱ Gen eral Description The series of devices use advanced super junction technology and design to provide excellent RDS(ON) with low gate charge. This super junct ion MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applic ations. Features ●New technology for high voltage device ●Low on-resistanc e and low conduction losses ●Small pa ckage ●Ultra Low Gate Charge cause lo wer driving requirements ●100% Avalan che Tested ●ROHS compliant VDS RDS(O N) MAX ID 650 V 260 mΩ 15 A Applica tion ● Power factor correction(PFC ● Switched mode power supplies(SMP S) ● Uninterruptible Power Supply(U PS) Schematic diagram Package Marki ng And Ordering Information Device De vice Package Marking NCE65R260D TO-2 63 NCE65R260D NCE65R260 TO-220 NCE6 5R260 NCE65R260F TO-220F NCE65R260F TO-263 TO-220 TO-220F Table 1. Absolute Maximum Ratings (TC.
Keywords NCE65R260F, datasheet, pdf, NCE Power, N-Channel, Super, Junction, Power, MOSFET, CE65R260F, E65R260F, 65R260F, NCE65R260, NCE65R26, NCE65R2, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)