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SSH10N80A Dataheets PDF



Part Number SSH10N80A
Manufacturers Samsung
Logo Samsung
Description Advanced Power MOSFET
Datasheet SSH10N80A DatasheetSSH10N80A Datasheet (PDF)

Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 µA (Max.) @ VDS = 700V Low RDS(ON) : 1.552 Ω (Typ.) Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 ΟC ) Continuous Drain Current (TC=100 ΟC) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Ava.

  SSH10N80A   SSH10N80A


SSH10N80A SSH10N80A BH7641FV


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