ADG1201

Data Sheet Low Capacitance, Low Charge Injection, ±15 V/+12 V, iCMOS, SPST in SOT-23 ADG1201 FEATURES 2.4 pF typical off switch source capacitance, dual supply <1 pC charge injection Low leakage: 0.6 nA maximum at 85°C 120 Ω typical on resistance at 25°C, dual supply Fully specified at ±15 V, +12 V No VL supply required 3 V logic-compatible inputs VINH = 2.0 V minimum VINL = 0.8 V maximum Rail-to-rail operation 6-lead SOT-23 package APPLICATIONS Automatic test equipment Data acquisition systems Battery-powered systems Sample-and-hold systems Audio signal routing Video signal routing Communication systems GENERAL DESCRIPTION The ADG1201 is a monolithic complementary metal-oxide semiconductor (CMOS) device containing a single-pole, single-throw (SPST) switch designed in an iCMOS® process. iCMOS is a modular manufacturing process combining a high voltage CMOS and bipolar technologies. iCMOS enables the development of a wide range of high performance analog ICs capable of 33 V operation in a footprint that no previous generation of high voltage devices has been able to achieve. Unlike analog ICs using conventional CMOS processes, iCMOS components can tolerate high supply voltages while providing increased performance, dramatically lower power consumption, and reduced package size. The ultralow capacitance and charge injection of this switch makes it an ideal solution for data acquisition and sample-and-hold applications, where low glitch and fast settling are required. Fast swi...