MOSFET
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA3N100P IXTP3N100P IXTH3N100P
Symbol
VDSS VDGR
VGSS...
Description
PolarTM Power MOSFET
N-Channel Enhancement Mode Avalanche Rated
IXTA3N100P IXTP3N100P IXTH3N100P
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
dv/dt
PD
TJ TJM Tstg
TL TSOLD
FMCd Weight
Test Conditions
TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M
Continuous Transient
Maximum Ratings 1000 1000
20 30
V V
V V
TC = 25C TC = 25C, Pulse Width Limited by TJM
TC = 25C TC = 25C
IS IDM, VDD VDSS, TJ 150°C
TC = 25C
3 6
3 200
10
125
-55 ... +150 150
-55 ... +150
A A
A mJ
V/ns
W
C C C
Maximum Lead Temperature for Soldering 1.6 mm (0.062in.) from Case for 10s
300 260
°C °C
Mounting Force (TO-263) Mounting Torque (TO-220 & TO-247)
10..65 / 2.2..14.6 1.13 / 10
N/lb Nm/lb.in
TO-263 TO-220 TO-247
2.5 g 3.0 g 6.0 g
Symbol
Test Conditions
(TJ = 25C, Unless Otherwise Specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 250μA
IGSS VGS = 20V, VDS = 0V
IDSS VDS = VDSS, VGS = 0V TJ = 125C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Characteristic Values
Min. Typ.
Max.
1000
V
2.5 4.5 V
50 nA
5 A 250 μA
4.8
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VDSS = ID25 = RDS(on)
1000V 3A 4.8
TO-263 (IXTA)
G S
TO-220 (IXTP)
D (Tab)
G DS
TO-247 (IXTH)
D (Tab)
G DS
D (Tab)
G = Gate S = Source
D = Drain Tab = Drain
Features
International Standard Packages Low RDS(ON) and QG Avalanche Rated Low Package Inductance
Advantages
High Power Density Easy to Mount Space Savings
Applications
Switch-Mode ...
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