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IXTP3N100P Dataheets PDF



Part Number IXTP3N100P
Manufacturers IXYS
Logo IXYS
Description MOSFET
Datasheet IXTP3N100P DatasheetIXTP3N100P Datasheet (PDF)

PolarTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTA3N100P IXTP3N100P IXTH3N100P Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD FMCd Weight Test Conditions TJ = 25C to 150C TJ = 25C to 150C, RGS = 1M Continuous Transient Maximum Ratings 1000 1000 20 30 V V V V TC = 25C TC = 25C, Pulse Width Limited by TJM TC = 25C TC = 25C IS  IDM, VDD  VDSS, TJ  150°C TC = 25C 3 6 3 200 10 125 -55 ... +150 150 -55 ... +150 A A A mJ V/ns W C C C.

  IXTP3N100P   IXTP3N100P


IXTH3N100P IXTP3N100P 2SD757


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