NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Trench construct...
NGTB40N60FLWG
IGBT
This Insulated Gate Bipolar
Transistor (IGBT) features a robust and cost effective Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss.
Features
Low Saturation Voltage using Trench with Field Stop Technology Low Switching Loss Reduces System Power Dissipation Soft Fast Reverse Recovery Diode Optimized for High Speed Switching 5 ms Short−Circuit Capability These are Pb−Free Devices
Typical Applications
Solar Inverters Uninterruptable Power Supply (UPS)
ABSOLUTE MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector−emitter voltage Collector current
@ TC = 25°C @ TC = 100°C
VCES 600 V
IC
A 80
40
Pulsed collector current, Tpulse limited by TJmax Diode Forward Current
@ TC = 25°C @ TC = 100°C Diode Pulsed Current Tpulse Limited by TJmax Short−circuit withstand time VGE = 15 V, VCE = 300 V, TJ ≤ +150°C Gate−emitte...
