20V P-Channel Enhancement Mode MOSFET
VDS= -20V RDS(ON),
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[email protected] RDS(ON),
[email protected],
[email protected]
130mΩ 190mΩ
Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance
Package Dimensions
SI2301
D
SOT-23(PACKAGE)
GS
REF.
A B C D E
F
Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60 0.35 0.50
0 0.10
0.45 0.55
REF.
G H K J L
M
Millimeter
Min. Max.
1.90 1.00 0.10 0.40 0.85
REF. 1.30 0.20 1.15
0° 10°
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1)
Maximum Power Dissipation 2)
Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Junction-to-Ambient Thermal Resistance (PCB mounted) 3)
TA = 25o TA = 75oC
Symbol
VDS VGS ID IDM
PD
TJ, Tstg
RthJA
Limit
-20 ±8 -2.2 -8 1.25 0.8 -55 to 150 100 166
Notes 1) Pulse width limited by maximum junctio...
