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A1SHB Dataheets PDF



Part Number A1SHB
Manufacturers Bruckewell
Logo Bruckewell
Description P-Channel Enhancement Mode Power MOSFET
Datasheet A1SHB DatasheetA1SHB Datasheet (PDF)

MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package M.

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MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS(ON) < 120mΩ @ VGS=-4.5V D G S Schematic diagram ● High power and current handing capability ● Lead free product is acquired ● Surface mount package Marking and pin assignment Application ● PWM applications ● Load switch SC70-3/ SOT-323 top view Package Marking and Ordering Information Device Marking Device Device Package A1SHB MS23P01S SOT-23 Reel Size Ø180mm Tape width 8 mm Quantity 3000 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Drain Current-Continuous Drain Current -Pulsed (Note 1) ID IDM Maximum Power Dissipation.


MS23P01S A1SHB FL2301A


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