Power MOSFET. A1SHB Datasheet

A1SHB MOSFET. Datasheet pdf. Equivalent


Bruckewell A1SHB
MS23P01S
P-Channel Enhancement Mode Power MOSFET
Description
The MS23P01S uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
General Features
VDS = -20V,ID = -2.6A
RDS(ON) < 160m@ VGS=-2.5V
RDS(ON) < 120m@ VGS=-4.5V
D
G
S
Schematic diagram
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
Application
PWM applications
Load switch
SC70-3/ SOT-323 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
MS23P01S
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-2.6
-13
0.9
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
138 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-20V,VGS=0V
Min Typ Max Unit
-20 - V
- - -1 μA
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A1SHB Datasheet
Recommendation A1SHB Datasheet
Part A1SHB
Description P-Channel Enhancement Mode Power MOSFET
Feature A1SHB; MS23P01S P-Channel Enhancement Mode Power MOSFET Description The MS23P01S uses advanced trench tech.
Manufacture Bruckewell
Datasheet
Download A1SHB Datasheet




Bruckewell A1SHB
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Condition
VGS=±12V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-2 A
VGS=-2.5V, ID=-1.8A
VDS=-5V,ID=-1A
VDS=-10V,VGS=0V,
F=1.0MHz
VDD=-10V, RL=5
VGS=-4.5V,RGEN=3
VDS=-10V,ID=-2A,
VGS=-4.5V
VGS=0V,IS=2A
MS23P01S
Min Typ Max
- - ±100
Unit
nA
-0.4 -0.7
- 78
- 102
6-
-1
120
160
-
V
m
m
S
- 325
- 63
- 37
-
-
-
PF
PF
PF
- 11
- 5.5
- 22
-8
- 3.2
- 0.6
- 0.9
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2 V
- - -2.6 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
2/6



Bruckewell A1SHB
Typical Electrical and Thermal Characteristics
Figure 1:Switching Test Circuit
MS23P01S
td(on)
VOUT
VIN
10%
ton
tr
td(off)
toff
tf
90%
INVERTED
10%
90%
10%
50%
90%
50%
PULSE WIDTH
Figure 2:Switching Waveforms
TJ-Junction Temperature()
Figure 3 Power Dissipation
TJ-Junction Temperature()
Figure 4 Drain Current
-Vds Drain-Source Voltage (V)
Figure 5 Output Characteristics
-ID- Drain Current (A)
Figure 6 Drain-Source On-Resistance
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