A1SHB MOSFET Datasheet

A1SHB Datasheet PDF, Equivalent


Part Number

A1SHB

Description

P-Channel Enhancement Mode Power MOSFET

Manufacture

Bruckewell

Total Page 6 Pages
PDF Download
Download A1SHB Datasheet PDF


A1SHB
MS23P01S
P-Channel Enhancement Mode Power MOSFET
Description
The MS23P01S uses advanced trench technology to
provide excellent RDS(ON), low gate charge and operation
with gate voltages as low as 1.8V. This device is suitable
for use as a load switch or in PWM applications.
General Features
VDS = -20V,ID = -2.6A
RDS(ON) < 160m@ VGS=-2.5V
RDS(ON) < 120m@ VGS=-4.5V
D
G
S
Schematic diagram
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
Application
PWM applications
Load switch
SC70-3/ SOT-323 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
A1SHB
MS23P01S
SOT-23
Reel Size
Ø180mm
Tape width
8 mm
Quantity
3000 units
Absolute Maximum Ratings (TA=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Drain Current-Continuous
Drain Current -Pulsed (Note 1)
ID
IDM
Maximum Power Dissipation
PD
Operating Junction and Storage Temperature Range
TJ,TSTG
Limit
-20
±12
-2.6
-13
0.9
-55 To 150
Unit
V
V
A
A
W
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
138 /W
Electrical Characteristics (TA=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-20V,VGS=0V
Min Typ Max Unit
-20 - V
- - -1 μA
1/6

A1SHB
Parameter
Gate-Body Leakage Current
On Characteristics (Note 3)
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Symbol
IGSS
VGS(th)
RDS(ON)
gFS
Clss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS
Condition
VGS=±12V,VDS=0V
VDS=VGS,ID=-250μA
VGS=-4.5V, ID=-2 A
VGS=-2.5V, ID=-1.8A
VDS=-5V,ID=-1A
VDS=-10V,VGS=0V,
F=1.0MHz
VDD=-10V, RL=5
VGS=-4.5V,RGEN=3
VDS=-10V,ID=-2A,
VGS=-4.5V
VGS=0V,IS=2A
MS23P01S
Min Typ Max
- - ±100
Unit
nA
-0.4 -0.7
- 78
- 102
6-
-1
120
160
-
V
m
m
S
- 325
- 63
- 37
-
-
-
PF
PF
PF
- 11
- 5.5
- 22
-8
- 3.2
- 0.6
- 0.9
-
-
-
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- - -1.2 V
- - -2.6 A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
2/6


Features MS23P01S P-Channel Enhancement Mode Pow er MOSFET Description The MS23P01S uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use a s a load switch or in PWM applications. General Features ● VDS = -20V,ID = - 2.6A RDS(ON) < 160mΩ @ VGS=-2.5V RDS( ON) < 120mΩ @ VGS=-4.5V D G S Schema tic diagram ● High power and current handing capability ● Lead free produ ct is acquired ● Surface mount packag e Marking and pin assignment Applicat ion ● PWM applications ● Load switc h SC70-3/ SOT-323 top view Package Ma rking and Ordering Information Device Marking Device Device Package A1SHB MS23P01S SOT-23 Reel Size Ø180mm T ape width 8 mm Quantity 3000 units Ab solute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Dr ain-Source Voltage VDS Gate-Source Vo ltage VGS Drain Current-Continuous Dr ain Current -Pulsed (Note 1) ID IDM Maximum Power Dissipation.
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