Effect Transistor. A2SHB Datasheet

A2SHB Transistor. Datasheet pdf. Equivalent

Part A2SHB
Description N-Channel Enhancement mode Field Effect Transistor
Feature SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD. SOT-23 /SOT-23 Plastic-Encapsulate MOSFETS SLS2302(N-Channel .
Manufacture SLS SEMICONDUCTOR
Datasheet
Download A2SHB Datasheet

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A2SHB
SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD.
SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS
SLS2302(N-Channel Enhancement mode Field Effect Transistor)
印章/MARKING: A2SHB
特点/Features:
1、 电流能力强;
2、 导通电阻低;
用途/Applications:
用于高速开关和 DC-DC 转换电路。
极限参数/Absolute maximum ratings(Ta=25℃)
参数/Parameter
漏极-源极电压/Drain-Source Voltage
栅极-源极电压/Gate-Source Voltage
漏极电流(持续)/Continuous Drain Current
耗散功率/Power Dissipation
热阻/ Thermal Resistance Junction to Ambient
结温/Junction Temperature
储存温度/Storage Temperature
符号/ Symbol
VDS
VGS
ID
PD
RθJA
Tj
Tstg
数值/Value
20
±8
2.1
0.35
350
150
-55~150
单位/Unit
V
V
A
W
℃/mW
电性能参数/Electrical characteristics (Ta=25℃)
参数
符号
测试条件
最小值
静态/Static Characteristics
源极-漏极击穿电压
栅极开启电压
栅极漏电流
零栅压漏极电流
漏极源极导通电阻
正向跨导
VBR(DSS)
VGS(th)
IGSS
IDSS
RDS(ON)
gfs
VGS=OV,ID=10μA
ID=50μA, VGS=VDS
VGS=±8V,VDS=0V
VGS=0V, VDS=20V
VGS=4.5V,ID=3.6A
VGS=2.5V,ID=3.1A
VDS=5V,ID=3.6A
30
0.65
动态/Dynamic Characteristics
输入电容
Ciss
输出电容
Coss VDS=10V,VGS=0V,f=1MHz
反向传输电容
Crss
开关参数/Switching Characteristics
开启延时
上升时间
关闭延时
下降延时
td(on)
tr
td(off)
tf
VDD=10V
RL=5.5Ω,ID≈3.6A
VGEN=4.5V,Rg=6Ω,
漏极-源极二极管参数/Drain-source Body Diode Characteristics
二极管正向压降
VSD
IS=0.94A,VGS=0V
注:① 脉冲测试脉冲宽度≤300µS,占空比≤2%;
② 这些参数未通过验证;
典型值
0.95
45
70
8
300
120
80
7
55
16
10
0.76
最大值
1.2
±100
1
60
115
15
80
60
25
1.2
单位
V
V
nA
µA
S
pF
ns
ns
ns
ns
V
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A2SHB
SLS SEMICONDUCTOR (SHENZHEN) CO.,LTD.
SOT-23 封装半导体场效应管/SOT-23 Plastic-Encapsulate MOSFETS
典型特性曲线图/Typical Characteristics
Free Datasheet http://www.Datasheet4U.com





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