Barrier Diode. XBS303V17R-G Datasheet

XBS303V17R-G Datasheet PDF, Equivalent


Part Number

XBS303V17R-G

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
PDF Download
Download XBS303V17R-G Datasheet


XBS303V17R-G Datasheet
XBS303V17R-G
Schottky Barrier Diode, 3A, 30V Type
ETR1614-001a
FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: VF=0.355V (TYP.)
: IF(AVE)=3A
: VRM=30V
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
30 V
Reverse Voltage (DC)
VR 30 V
Forward Current (Average) IF(AVE) 3 A
Non Continuous
Forward Surge Current*1
IFSM
60
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55+150
*1Non continuous high amplitude 60Hz half-sine wave.
A
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
MARKING RULE
①②③④⑤⑥: 303V17(Product Number)
⑦⑧
: Assembly Lot Number
APPLICATIONS
Rectification
Protection against reverse connection of battery
PACKAGING INFORMATION
Cathode Bar
SMA
Unit: mm
PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS303V17R-G
SMA (Halogen & Antimony free)
XBS303V17R
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2trr measurement circuit
SYMBOL
TEST CONDITIONS
VF1 IF=0.5A
VF2 IF=1A
VF3 IF=3A
IR VR=30V
Ct VR=1V , f=1MHz
trr IF=IR=10mA , irr=1mA
Bias Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.265
0.295
0.355
0.35
385
90
Ta=25
MAX.
0.34
0.36
0.39
3
-
-
UNIT
V
V
V
mA
pF
ns
1/3

XBS303V17R-G Datasheet
XBS303V17R-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
10 100
Ta=125℃
1
Ta=125℃
75℃
0.1
-25℃
25℃
100℃
10
75℃
1
0.1 25℃
0.01
0
0.2 0.4
FoFrowrawradrdVVolotaltgaege:  VVF (FV(V) )
(3) Forward Voltage vs. Operating Temperature
0.6
0.6
0.4
IF=3A
0.2 1.5A
0.5A
0.1A
0.0
-50
0
50 100
OpOepreartiantginTgeTmepmepreartautruer:eT aT(a(℃) )
150
(5) Inter-Terminal Capacity vs. Reverse Voltage
1000
800
Ta=25℃
600
400
200
0
0 10 20
ReRveevresreseVoVltoaltgaeg:eV RV(RV()V)
30
0.01
0
10 20
RReevveerrssee VVooltltaaggee: VVRR((VV))
(4) Reverse Current vs. Operating Temperature
30
100
10
VR=20V
10V
5V
1V
1
0.1
0.01
0
50 100
OOppeerraattiningg TTeemmppeerraattuurree: TTaa((℃))
150
(6) Average Forward Current vs. Operating Temperature
4.0
3.0
2.0
1.0
0.0
0
50 100
OOppeerraattiinngg TTeemmppeerraattuurree : TTaa (())
150
2/3


Features Datasheet pdf XBS303V17R-G Schottky Barrier Diode, 3A, 30V Type ETR1614-001a ■FEATURES F orward Voltage Forward Current Repetiti ve Peak Reverse Voltage : VF=0.355V (T YP.) : IF(AVE)=3A : VRM=30V ■ABSOLUT E MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Re verse Voltage VRM 30 V Reverse Voltag e (DC) VR 30 V Forward Current (Avera ge) IF(AVE) 3 A Non Continuous Forward Surge Current*1 IFSM 60 Junction Te mperature Tj 125 Storage Temperature Range Tstg -55~+150 *1: Non conti nuous high amplitude 60Hz half-sine wav e. A ℃ ℃ * When the IC is operate d continuously under high load conditio ns such as high temperature, high curre nt and high voltage, it may have the ca se that reliability reduces drastically even if under the absolute maximum rat ings. Adequate “Derating” should be taken into consideration while designi ng. ■MARKING RULE ①②③④⑤ : 303V17(Product Number) ⑦⑧ : As sembly Lot Number ■APPLICATIONS ●Rectification ●Protecti.
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