Barrier Diode. XBS303V17 Datasheet

XBS303V17 Datasheet PDF, Equivalent


Part Number

XBS303V17

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
PDF Download
Download XBS303V17 Datasheet PDF


XBS303V17 Datasheet
XBS303V17
Schottky Barrier Diode, 3A, 30V Type
FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: VF=0.355V (TYP.)
: IF(AV)=3A
: VRM=30V
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
30 V
Reverse Voltage (DC)
VR 30 V
Forward Current (Average)
IF(AV)
3A
Non Continuous
Forward Surge Current*1
IFSM
60 A
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 +150
*1 Non continuous high amplitude 60Hz half-sine wave.
* When the IC is operated continuously under high load conditions such as high temperature,
high current and high voltage, it may have the case that reliability reduces drastically even if
under the absolute maximum ratings. Adequate “Derating” should be taken into
consideration while designing.
MARKING RULE
: 303V17(Product Number)
: Assembly Lot Number
ETR1614-001
APPLICATIONS
Rectification
Protection against reverse connection of battery
PACKAGING INFORMATION
Cathode Bar
SMA
Unit: mm
PRODUCT NAME
PRODUCT NAME
XBS303V17 *
DEVICE ORIENTATION
R : Embossed tape, standard feed
* Please put the device orientation type “R”.
ELECTRICAL CHARACTERISTICS
PARAMETER
SYMBOL
TEST CONDITIONS
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2 trr measurement circuit
Bias
VF1 IF=0.5A
VF2 IF=1A
VF3 IF=3A
IR VR=30V
Ct VR=1V , f=1MHz
trr IF=IR=10mA , irr=1mA
Device Under test
Pulse Generatrix
Oscilloscope
MIN.
-
-
-
-
-
-
LIMITS
TYP.
0.265
0.295
0.355
0.35
385
90
Ta=25
MAX.
0.34
0.36
0.39
3
-
-
UNIT
V
V
V
mA
pF
ns
1/3

XBS303V17 Datasheet
XBS303V17
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
10 100
Ta=125℃
1
Ta=125℃
75℃
0.1
-25℃
25℃
100℃
10
75℃
1
0.1 25℃
0.01
0
0.2 0.4
FoFrowrawradrdVVolotaltgaege:  VVF (FV(V) )
(3) Forward Voltage vs. Operating Temperature
0.6
0.6
0.4
IF=3A
0.2 1.5A
0.5A
0.1A
0.0
-50
0
50 100 150
OpOepreartiantginTgeTmepmepreartautruer:eT aT(a (℃) )
(5) Inter-Terminal Capacity vs. Reverse Voltage
1000
800
Ta=25℃
600
400
200
0
0 10 20
ReRveevresreseVoVltoaltgaeg:eV RV(RV()V)
30
0.01
0
10 20
RReevveerrssee VVooltltaaggee: VVRR((VV))
(4) Reverse Current vs. Operating Temperature
30
100
10
VR=20V
10V
5V
1V
1
0.1
0.01
0
50 100
OOppeerraattiningg TTeemmppeerraattuurree: TTaa((℃))
150
(6) Average Forward Current vs. Operating Temperature
4.0
3.0
2.0
1.0
0.0
0
50 100
OOppeerraattiinngg TTeemmppeerraattuurree : TTaa ((℃))
150
2/3


Features Datasheet pdf XBS303V17 Schottky Barrier Diode, 3A, 3 0V Type FEATURES Forward Voltage Forw ard Current Repetitive Peak Reverse Vol tage : VF=0.355V (TYP.) : IF(AV)=3A : VRM=30V ABSOLUTE MAXIMUM RATINGS Ta=25 PARAMETER SYMBOL RATINGS UNIT Repet itive Peak Reverse Voltage VRM 30 V R everse Voltage (DC) VR 30 V Forward C urrent (Average) IF(AV) 3A Non Conti nuous Forward Surge Current*1 IFSM 60 A Junction Temperature Tj 125 Stora ge Temperature Range Tstg -55 +150 *1 Non continuous high amplitude 60Hz hal f-sine wave. * When the IC is operated continuously under high load condition s such as high temperature, high curren t and high voltage, it may have the cas e that reliability reduces drastically even if under the absolute maximum rati ngs. Adequate “Derating” should be taken into consideration while designin g. MARKING RULE : 303V17(Product Numb er) : Assembly Lot Number ETR1614-001 APPLICATIONS Rectification Protection a gainst reverse connection of battery PACKAGING INFORMATION Cat.
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