N-Channel Power MOSFET
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU04N60A
V(BR)DSS
600V
N...
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-252-2L(4R) Plastic-Encapsulate MOSFETS
CJU04N60A
V(BR)DSS
600V
N-Channel Power MOSFET
RDS(on)MAX
3Ω@10V
ID
4A
GENERAL DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching
applications such as power supplies, converters, power motor controls and bridge circuits.
FEATURE z High Current Rating z Lower RDS(on) z Lower Capacitance z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified
TO-252-2L(4R)
1. GATE 2. DRAIN 3. SOURCE
2 1
3
MARKING
CJU04N60A
XXX
CJU04N60A= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code
EQUIVALENT CIRCUIT
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Dr...
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