CJU05N60

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L(4R) Plastic-Encapsulate MOSFETS CJU05N60 V(BR)DSS 600V N-CHANNEL POWER MOSFET RDS(on)MAX   2.5Ω@10V ID 4.5 A TO-252-2L(4R) DESCRIPTION This advanced high voltage MOSFET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode with fast recovery time. Designed for high voltage, high speed switching applications 1. GATE 2. DRAIN 3. SOURCE 1 such as power suplies, converters, power motor controls and bridge circuits. FEATURES z Low RDS(on) z Lower Capacitances z Lower Total Gate Charge z Tighter VSD Specifications z Avalanche Energy Specified MARKING EQUIVALENT CIRCUIT CJU05N60 XXX CJU05N60= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code 2 3 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Drain-Source Voltage Parameter Gate-Source Voltage Continuous Drain Current Sin...