CJU20N06

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU20N06 N-Channel Power MOSFET V(BR)DSS RDS(on)MAX ID 60V 45mΩ@10V   20A   GENERAL DESCRIPTION The CJU20N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability TO-252-2L 1. GATE 2. DRAIN 3. SOURCE APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply MARKING: Equivalent Circuit CJU20N06= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gat...