CJU30N03

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30N03 N-Channel Power MOSFET GENERAL DESCRIPTION The CJU30N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. FEATURE z High density cell design for ultra low Rdson z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation z Special process technology for high ESD capability APPLICATION z Power switching application z Hard switched and high frequency circuits z Uninterruptible power supply TO-252-2L 1. GATE 2. DRAIN 3. SOURCE Maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current ID Pulsed Drain Current IDM Single Pulsed Avalanche Energy* EAS Power Dissipation PD Thermal Resistance from Junction to Ambient RθJA ...