CJU30N10

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU30N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX   31mΩ@10V ID 30 A DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. TO-252-2L 1. GATE 2. DRAIN 3. SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURES  High density cell design for ultra low RDS(on)  Special process technology for high ESD capability  Fully characterized avalanche voltage and current  Excellent package for good heat dissipation  Good stability and uniformity with high EAS APPLICATIONS  Hard switched and high frequency circuits  Uninterruptible power supply  Power switching application MARKING EQUIVALENT CIRCUIT CJU30N10...