CJU40N10

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU40N10 N-Channel Power MOSFET V(BR)DSS 100V RDS(on)MAX   17mΩ@10V ID 40A  TO-252-2L DESCRIPTION This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. 1. GATE 2. DRAIN 3. SOURCE Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits. FEATURES  High density cell design for ultra low RDS(on)  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS APPLICATIONS  Hard switched and high frequency circuits  Uninterruptible power supply MARKING  Special process technology for high ESD capability  Excellent package for good heat dissipation  Power switching application EQUIVALENT CIRCUIT CJU40N10= Device c...