CJU40P04

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU40P04 P-Channel Power MOSFET V(BR)DSS -40V RDS(on)MAX   14mΩ@-10V ID -40A TO-252-2L   DESCRIPTION The CJU40P04 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is well 1. GATE 2. DRAIN 3. SOURCE suited for high current load applications. FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized Avalanche voltage and current z Good stability and uniformity with high EAS APPLICATIONS z Excellent package for good heat dissipation z Special process technology for high ESD capability z Power switching application z Hard switched and high frequency circuits z Uninterruptible Power Supply MARKING EQUIVALENT CIRCUIT CJU40P04= Device code Solid dot = Green molding compound device, if none, the normal device XXX=Date Code MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Drain-Source Voltage Parameter G...