PTD2N60

PTD2N60/PTU2N60 600V N-Channel MOSFET Features 1.9A, 600V, RDS(on) = 4.70Ω @VGS = 10 V Low gate charge ( typical 9nC) High ruggedness Fast switching 100% avalanche tested Improved dv/dt capability General Description This Power MOSFET is produced using PHILOP's advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency sw itched mode power supplies, active power factor correction based on half bridge topology. PTD2N60 (TO-252) PTU2N60 (TO-251) Absolute Maximum Ratings Symbol VDSS ID Parameter Drain to Source Voltage Continuous Drain Current(@TC = 25°C) Continuous Drain Current(@TC = 100°C) IDM VGS EAS EAR dv/dt PD Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode R...