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K80E07NE Dataheets PDF



Part Number K80E07NE
Manufacturers Toshiba
Logo Toshiba
Description TK80E07NE
Datasheet K80E07NE DatasheetK80E07NE Datasheet (PDF)

TK80E07NE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U−MOS -H) TK80E07NE „ E-Bike/UPS/Inverter Unit: mm Note : This product is designed for E-Bike / UPS / Inverter in China / India market. z Low drain−source on-resistance : RDS(ON) = 6.9 mΩ (typ.) z Low leakage current : IDSS = 10 µA (max) (VDS = 70 V) z Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 0.3 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain−source voltage Drain−gate voltage (RGS = 20 k.

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MDD3N50 K80E07NE TK80E07NE


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