STGD6M65DF2

STGD6M65DF2 Datasheet Trench gate field-stop, 650 V, 6 A, low-loss M series IGBT in a DPAK package TAB 23 1 DPAK C(2, TAB) G(1) E(3) NG1E3C2T Product status link STGD6M65DF2 Features Maximum junction temperature: TJ = 175 °C 6 μs of minimum short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 6 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast-recovery antiparallel diode Applications Industrial motor control PFC converters, single phase input Uninterruptable power supplies (UPS) Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product summary Order code STGD6M65DF2 Marking G6M65DF2 Package DPAK Packing Tape and reel DS11406 - Rev 5 - July 2023 For further information contact your local STMicroelectronics sales office. www.st.com 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP(1) Pulse...