STGP6M65DF2

STGP6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.55 V (typ.) @ IC = 6 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGP6M65DF2 Table 1: Device summary Marking G6M65DF2 Package TO-220 Packing Tube August 2016 DocID028696 Rev 3 This is information on a produc...