Document
STGW75M65DF2, STGWA75M65DF2
Trench gate field-stop IGBT, M series 650 V, 75 A low loss
Datasheet - production data
Figure 1: Internal schematic diagram
Features
6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 75 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode
Applications
Motor control UPS PFC
Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
Order code STGW75M65DF2 STGWA75M65DF2
Table 1: Device summary Marking
Package
G75M65DF2
TO-247 TO-247 long leads
Packing Tube
June 20.