STGWA75M65DF2

STGW75M65DF2, STGWA75M65DF2 Trench gate field-stop IGBT, M series 650 V, 75 A low loss Datasheet - production data Figure 1: Internal schematic diagram Features  6 µs of short-circuit withstand time  VCE(sat) = 1.65 V (typ.) @ IC = 75 A  Tight parameter distribution  Safer paralleling  Low thermal resistance  Soft and very fast recovery antiparallel diode Applications  Motor control  UPS  PFC Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Order code STGW75M65DF2 STGWA75M65DF2 Table 1: Device summary Marking Package G75M65DF2 TO-247 TO-247 long leads Packing Tube June 20...