IGBT
TO-247 long leads C (2)
G (1)
Sc12850_no_tab
E (3)
STGWA50M65DF2
Datasheet
Trench gate field-stop 650 V, 50 A low-lo...
Description
TO-247 long leads C (2)
G (1)
Sc12850_no_tab
E (3)
STGWA50M65DF2
Datasheet
Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package
Features
Maximum junction temperature: TJ = 175 °C 6 μs of minimum short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 50 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft- and fast-recovery antiparallel diode
Applications
Motor control UPS PFC General purpose inverter
Description
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Product status link STGWA50M65DF2
Product summary
Order code
STGWA50M65DF2
Marking
G50M65DF2
Package
TO-247 long leads
Packing
Tube
DS11402 - Rev 4 - March 2023 For further information contact your local STMicroelectronics sales office.
www.st.com
STGWA50M65DF2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VCES
Collector-emitter voltage (VGE = 0 V)
Continuous collector current at TC = 25 °C IC(1)
Continuous collector current at TC = 100 °C
ICP(2)
P...
Similar Datasheet