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STGWA50M65DF2

STMicroelectronics

IGBT

TO-247 long leads C (2) G (1) Sc12850_no_tab E (3) STGWA50M65DF2 Datasheet Trench gate field-stop 650 V, 50 A low-lo...


STMicroelectronics

STGWA50M65DF2

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Description
TO-247 long leads C (2) G (1) Sc12850_no_tab E (3) STGWA50M65DF2 Datasheet Trench gate field-stop 650 V, 50 A low-loss M series IGBT in a TO-247 long leads package Features Maximum junction temperature: TJ = 175 °C 6 μs of minimum short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 50 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft- and fast-recovery antiparallel diode Applications Motor control UPS PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGWA50M65DF2 Product summary Order code STGWA50M65DF2 Marking G50M65DF2 Package TO-247 long leads Packing Tube DS11402 - Rev 4 - March 2023 For further information contact your local STMicroelectronics sales office. www.st.com STGWA50M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC(1) Continuous collector current at TC = 100 °C ICP(2) P...




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