STPSC20H065C

STPSC20H065C 650 V power Schottky silicon carbide diode A1 (1) A2 (3) K (2) A2 A1 K TO-220AB STPSC20H065CT A2 K A1 TO-247 STPSC20H065CW Features  No or negligible reverse recovery  Switching behavior independent of temperature  Dedicated to PFC applications  High forward surge capability Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650 V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behavior is independent of temperature. Especially suited for use in PFC applications, this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases. Table 1. Device summary Symbol Value IF(AV) VRRM Tj (max) 2 x 10 A 650 V 175 °C November 2013 This is information on a product in full production. DocID023605 Rev 3 1/9 www.st.com Characteristics 1 Characteristics STPSC20H065C Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 650 V IF(RMS) Forward rms current IF(AV) Average forward current Tc = 135 °C(1), DC, per diode Tc = 125 °C(2), per device 22 A 10 A 20 IFSM Surge non repet...