SVF18N60F

SVF18N60F_Datasheet 18A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N60F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guarding ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. FEATURES ∗ 18A,600V,RDS(on)（typ）=0.36Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVF18N60F Package TO-220F-3L Marking SVF18N60F Material Pb free Packing Tube HANGZHOU SILAN MICROELECTRONICS CO.,LTD Http://www.silan.com.cn REV:1.0 2012.07.30 Page 1 of 7 Silan Microelectronics SVF18N60F_Datasheet ABSOLUTE MAXIMUM RAT...