Document
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DD13003F TRANSISTOR ( NPN )
TO-220F
FEATURE
Power Switching Applications
MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
1. BASE 2. COLLECTOR
123
VCBO VCEO VEBO IC PC RθJA
TJ, Tstg
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Collector Dissipation Thermal Resistance from Junction to Ambient Junction and Storage Temperature
700 V 400 V
9V 1.5 A 2W
62.5 ℃/W
-55~+150 ℃
3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test conditions
Min Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
I=c= 5mA,IE 0
700
V
Collector-emitter breakdown voltage Emitter-base breakdown voltage
V(BR)CEO V(BR)EBO
Ic== 10mA,IB 0 =IE= 2mA, IC 0
400 9
V V
Collector cut-off current
ICBO
=VCB=700V,IE 0
1 mA
Collector cut-off current
ICEO
=VCE=400V,IB .