JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate Transistors
3DD13007N36F TRANSISTOR (NPN...
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-220F Plastic-Encapsulate
Transistors
3DD13007N36F
TRANSISTOR (
NPN)
TO-220F
FEATURES z Power switching applications
1. BASE
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
VCBO VCEO VEBO IC PC Tj Tstg
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value
700 400
9 8 2 150 -55~150
Unit
V V V A W
℃
℃
2. COLLECTOR 3. EMITTER
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Storage time Fall time Transition frequency
CLASSIFICATION OF hFE(1)
Range
10-15
15-20
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICB...
