AS4SD32M16

Austin Semiconductor, Inc. SDRAM AS4SD32M16 512Mb: 32 Meg x 16 SDRAM Synchronous DRAM Memory FEATURES Full Military temp (-55°C to 125°C) processing available Configuration: 32 Meg x 16 (8 Meg x 16 x 4 banks) Fully synchronous; all signals registered on positive edge of system clock Internal pipelined operation; column address can be changed every clock cycle Internal banks for hiding row access/precharge Programmable burst lengths: 1, 2, 4, 8 or full page Auto Precharge, includes CONCURRENT AUTO PRECHARGE and Auto Refresh Modes Self Refresh Mode (IT) 64ms, 8,192-cycle refresh (IT) <24ms 8,192 cycle refresh (XT) WRITE Recovery (tWR= “2 CLK”) LVTTL-compatible inputs and outputs Single +3.3V ±0.3V power supply PIN ASSIGNMENT (Top View) 54-Pin TSOP OPTIONS Plastic Package - OCPL* Copper Lead-Frame (Cu) MARKING DGC Timing (Cycle Time) 7.5ns @ CL = 3 (PC133) or 7.5ns @ CL = 2 (PC100) -75 Operating Temperature Ran...