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BC857S Dataheets PDF



Part Number BC857S
Manufacturers JCET
Logo JCET
Description DUAL TRANSISTOR
Datasheet BC857S DatasheetBC857S Datasheet (PDF)

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-363 Plastic-Encapsulate Transistors BC857S DUAL TRANSISTOR (PNP+PNP) FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors MARKING: 3C MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA TJ Tssttgg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Po.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD JC(T SOT-363 Plastic-Encapsulate Transistors BC857S DUAL TRANSISTOR (PNP+PNP) FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors MARKING: 3C MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA TJ Tssttgg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature Value -50 -45 -5 -0.2 0.3 417 150 -55-150 Units V V V A W ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacit.


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