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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
JC(T SOT-363 Plastic-Encapsulate Transistors
BC857S DUAL TRANSISTOR (PNP+PNP)
FEATURES z Two transistors in one package z Reduces number of components and board space z No mutual interference between the transistors
MARKING: 3C
MAXIMUM RATINGS(Ta=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC RθJA TJ Tssttgg
Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Value -50 -45 -5 -0.2 0.3 417 150 -55-150
Units V V V A W
℃/W ℃ ℃
ELECTRICAL CHARACTERISTICS(Ta= 25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency Collector output capacit.