CJU55P30

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate MOSFETS CJU55P30 P-Channel Power MOSFET DESCRIPTION The CJU55P30 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. TO-252-2L FEATURES z High density cell design for ultra low RDS(ON) z Fully characterized avalanche voltage and current z Good stability and uniformity with high EAS z Excellent package for good heat dissipation APPLICATIONS z Power switching application z Hard switched and high frequency circuits z Uninterruptible Power Supply(UPS) MARKING JCET LOGO CJU55P30= Part No. XXX=Date Code 1. GATE 2. DRAIN 3. SOURCE EQUIVALENT CIRCUIT MAXIMUM RATINGS ( Ta=25℃ unless otherwise noted ) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage...