Rectifier Bridge. MYXDB0650-10CEN Datasheet


MYXDB0650-10CEN Bridge. Datasheet pdf. Equivalent


MYXDB0650-10CEN


SiC Schottky Diode Rectifier Bridge
SiC Schottky Diode Rectifier Bridge 650 Volt 10 Amp Hermetic MYXDB0650-10CEN

Product OaverrvyiewFeatures •	 High voltage 650V isolation
•	 High current 10A
in•	 High temperature 210°C
•	 BeO free and RoHS compliant
•	 HMP solder tinned leads available
relim•	 Electrically isolated flange
•	 Silicon Carbide (SiC) Schottky diodes exhibit low forward voltage and superior high temperature performance
•	 No reverse recovery time
P•	 Screening options available

Benefits
•	 Essentially no switching losses •	 Higher efficiency •	 Reduction of heat sink requirements
Applications
•	 Harsh environment rectification •	 Harsh environment regulators

ºº Commercial high temperature ºº In accordance with MIL-PRF-19500 ºº Other options available on request

•	 Other packaging options available

Absolute Maximum Ratings* (Per single diode)

Symbols VR VRRM
IF(AVG) IFRM IFSM PD TJ Tstg

Parameters DC Reverse Voltage Repetitive Peak Reverse Voltage Average Forward Cu...



MYXDB0650-10CEN
SiC Schottky Diode Rectifier Bridge
650 Volt 10 Amp Hermetic
MYXDB0650-10CEN
Product OaverrvyiewFeatures
• High voltage 650V isolation
• High current 10A
in• High temperature 210°C
• BeO free and RoHS compliant
• HMP solder tinned leads available
relimElectrically isolated flange
• Silicon Carbide (SiC) Schottky diodes exhibit low
forward voltage and superior high temperature
performance
• No reverse recovery time
P• Screening options available
Benefits
• Essentially no switching losses
Higher efficiency
• Reduction of heat sink requirements
Applications
Harsh environment rectification
• Harsh environment regulators
ºº Commercial high temperature
ºº In accordance with MIL-PRF-19500
ºº Other options available on request
• Other packaging options available
Absolute Maximum Ratings* (Per single diode)
Symbols
VR
VRRM
IF(AVG)
IFRM
IFSM
PD
TJ
Tstg
Parameters
DC Reverse Voltage
Repetitive Peak Reverse Voltage
Average Forward Current
Repetitive Peak Forward Current (Tp=10ms, Half Sine Wave)
Surge Peak Forward Current (Tp=10µs, Half Sine Wave )
Total Power Dissipation
Junction Temperature Range
Storage Temperature Range
Figure 1: TO-258 5 PIN
Case
NC
Pin 1 Pin 2 Pin 3 Pin 4 Pin 5
- ~ NC ~ +
Figure 2: Circuit Diagram
Values
650
650
10
60
100
29
-55 to +210
-55 to +210
Units
Volts
Volts
Amps
Amps
Amps
Watts
oC
oC
Thermal Properties
Symbols
RθJC
Parameters
Thermal Resistance, Junction To Case
Values
1.6
Units
oC / Watt
March 2014 Rev 1.0
1
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com

MYXDB0650-10CEN
SiC Schottky Diode Rectifier Bridge
650 Volt 10 Amp Hermetic
MYXDB0650-10CEN
Electrical Characteristics
arySymbols
VF
inIR
relimQc
PC
Parameters
Forward Voltage ##
Reverse Current ##
Total Capacitive Charge ##
Total Capacitance ##
Test Conditions
IF = 10A, Tj = 25oC
IF = 10A, Tj = 210oC
VR = 650V, Tj= 25oC
VR = 650V, Tj = 210oC
VR = 650V, Tj=25oC, IF=10A, di/dt=500 A/μs
VR = 0V, Tj=25oC, f=1MHz
VR = 200V, Tj=25oC, f=1MHz
VR = 400V, Tj=25oC, f=1MHz
## Calculated per single diode
Typ Max Units
2.2 2.5
Volts
3.2 4.1
10 100
μAmps
140 1000
28 nC
550
65 pF
50
MICROSS
MYXDB06 5 0 - C E N
########      
yyww
CE = TO-258 5 PIN
####### = Batch code
yyww = Date code
yy = year
ww = week
(Font and text colour is not representative of actual parts produced)
Figure 3: Package Dimensions
March 2014 Rev 1.0
2
Micross US (Americas) 407.298.7100 • Micross UK (EMEA & ROW) +44 (0) 1603 788967 • sales@micross.com • www.micross.com




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