SiHB35N60E

www.vishay.com SiHB35N60E Vishay Siliconix E Series Power MOSFET D2PAK (TO-263) D GD S G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) at TJ max. RDS(on) typ. () at 25 °C Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 650 VGS = 10 V 132 22 46 Single 0.082 ORDERING INFORMATION Package Lead (Pb)-free and halogen-free FEATURES A specific on resistance (m-cm2) reduction of 25 % Low figure-of-merit (FOM) Ron x Qg Low input capacitance (Ciss) Reduced switching and conduction losses Ultra low gate charge (Qg) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Power factor correction power supplies (PFC) Hard switching PWM stages Computing - Switch mode power supplies (SMPS) Lighting - Light emitting diode (LED) - High intensity discharge (HID) Telecom - Server power supplies Renewable energy - Photovoltaic inverters Industrial - Welding - Induction heating - Motor drives - Battery chargers - Uniterruptable power supplies D2PAK (TO-263) SiHB35N60E-GE3 SiHB35N60ET1-GE3 SiHB35N60ET5-GE3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current (TJ = 150 °C) Pulsed drain current a Linear derating factor VGS at 10 V TC = 25 °C TC = 100 °C VDS VGS ID IDM Single pulse avalanche energy b Maximum power dissipation Operating junction and storage temperature range Drain-source voltag...