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R6004ENX Dataheets PDF



Part Number R6004ENX
Manufacturers Rohm
Logo Rohm
Description Power MOSFET
Datasheet R6004ENX DatasheetR6004ENX Datasheet (PDF)

R6004ENX   Nch 600V 4A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.98Ω ID ±4.0A TO-220FM PD 40W          lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specif.

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R6004ENX   Nch 600V 4A Power MOSFET    Datasheet lOutline VDSS 600V   RDS(on)(Max.) 0.98Ω ID ±4.0A TO-220FM PD 40W          lFeatures 1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant lInner circuit lApplication Switching lPackaging specifications Code Packing C7 G Tube C7 Tube* - (Blank) Bulk* *Package dimensions are different lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified) Parameter Symbol Value Unit Drain - Source voltage Continuous drain current Pulsed drain current VDSS ID*1 IDP*2 600 V ±4.0 A ±8.0 A Gate - Source voltage static AC(f>1Hz) VGSS ±20 V ±30 V Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive IAS EAS*3 EAS*3 0.8 A 46 mJ 0.13 mJ Power dissipation (Tc = 25°C) PD 40 W Junction temperature Tj 150 ℃ Operating junction and storage temperature range Tstg -55 to +150 ℃                                                                                          www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 1/12 20200131 - Rev.002     R6004ENX            lAbsolute maximum ratings (Ta = 25°C) Parameter Reverse diode dv/dt Drain - Source voltage slope                 Datasheet Symbol dv/dt Conditions - Values Unit 15 V/ns dv/dt VDS = 480V, Tj = 25℃ 50 V/ns lThermal resistance Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s Symbol RthJC*4 RthJA Tsold Values Unit Min. Typ. Max. - - 3.13 ℃/W - - 70 ℃/W - - 265 ℃ lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Drain - Source breakdown voltage V(BR)DSS VGS = 0V, ID = 1mA Zero gate voltage drain current Gate - Source leakage current Gate threshold voltage Static drain - source on - state resistance Gate resistance VDS = 600V, VGS = 0V IDSS Tj = 25°C Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA VGS = 10V, ID = 1.5A RDS(on)*5 Tj = 25°C Tj = 125°C RG f =1MHz, open drain Values Unit Min. Typ. Max. 600 - - V       - 0.1 100 μA - - 1000 - - ±100 nA 2 - 4V       - 0.90 0.98 Ω - 1.36 - - 16.7 - Ω                                               www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 2/12                                            20200131 - Rev.002 R6004ENX                 Datasheet lElectrical characteristics (Ta = 25°C) Parameter Symbol Conditions Forward Transfer Admittance Input capacitance Output capacitance Reverse transfer capacitance Effective output capacitance, energy related Effective output capacitance, time related Turn - on delay time Rise time Turn - off delay time Fall time |Yfs|*5 VDS = 10V, ID = 2A Ciss VGS = 0V Coss VDS = 25V Crss f = 1MHz   Co(er) VGS = 0V VDS = 0V to 480V Co(tr)   td(on)*5 tr*5 td(off)*5 tf*5 VDD ⋍ 300V,VGS = 10V ID = 2A RL ⋍ 150Ω RG = 10Ω Values Unit Min. Typ. Max. 1.5 3.0 - S - 250 - - 250 - pF - 30 - - 14 - pF - 57 - - 22 - - 22 - ns - 55 - - 40 - lGate charge characteristics (Ta = 25°C) Parameter Symbol Conditions Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage Qg*5 Qgs*5 Qgd*5 VDD ⋍ 300V, ID = 4A, VGS = 10V V(plateau) VDD = 300V, ID = 4A Values Unit Min. Typ. Max. - 15 - - 2.5 - nC - 10 - - 6.5 - V *1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒100mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed                                                                                            www.rohm.com © 2019 ROHM Co., Ltd. All rights reserved. 3/12 20200131 - Rev.002 R6004ENX                 Datasheet lBody diode electrical characteristics (Source-Drain) (Ta = 25°C) Parameter Symbol Conditions Values Unit Min. Typ. Max. Continuous forward current Pulse forward current IS*1 TC = 25℃ ISP*2 - - 4.0 A - - 8.0 A Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current VSD*5 trr*5 Qrr*5 Irrm*5 VGS = 0V, IS = 4A IS = 4A di/dt = 100A/μs - - 1.5 V - 320 - ns - 2.4 - μC - 15 - A lTypical transient thermal characteristics Symbol Value Unit Rth1 0.557 Rth2 1.61 K/W Rth3 2.24 Symbol Cth1 Cth2 Cth3 Value 0.00102 0.00898 0.440       Unit Ws/K                                                 .


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