Document
R6004ENX
Nch 600V 4A Power MOSFET
Datasheet
lOutline
VDSS
600V
RDS(on)(Max.)
0.98Ω
ID
±4.0A
TO-220FM
PD
40W
lFeatures
1) Low on-resistance 2) Fast switching 3) Drive circuits can be simple 4) Parallel use is easy 5) Pb-free plating ; RoHS compliant
lInner circuit
lApplication Switching
lPackaging specifications
Code
Packing
C7 G
Tube
C7
Tube*
- (Blank)
Bulk*
*Package dimensions are different
lAbsolute maximum ratings (Ta = 25°C ,unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain - Source voltage Continuous drain current Pulsed drain current
VDSS ID*1 IDP*2
600
V
±4.0
A
±8.0
A
Gate - Source voltage
static
AC(f>1Hz)
VGSS
±20
V
±30
V
Avalanche current, repetitive Avalanche energy, single pulse Avalanche energy, repetitive
IAS EAS*3 EAS*3
0.8
A
46
mJ
0.13
mJ
Power dissipation (Tc = 25°C)
PD
40
W
Junction temperature
Tj
150
℃
Operating junction and storage temperature range
Tstg
-55 to +150
℃
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© 2019 ROHM Co., Ltd. All rights reserved.
1/12
20200131 - Rev.002
R6004ENX
lAbsolute maximum ratings (Ta = 25°C) Parameter
Reverse diode dv/dt
Drain - Source voltage slope
Datasheet
Symbol
dv/dt
Conditions -
Values Unit 15 V/ns
dv/dt VDS = 480V, Tj = 25℃ 50 V/ns
lThermal resistance
Parameter
Thermal resistance, junction - case Thermal resistance, junction - ambient Soldering temperature, wavesoldering for 10s
Symbol
RthJC*4 RthJA Tsold
Values Unit
Min. Typ. Max.
-
- 3.13 ℃/W
-
- 70 ℃/W
-
- 265 ℃
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Drain - Source breakdown voltage
V(BR)DSS VGS = 0V, ID = 1mA
Zero gate voltage drain current
Gate - Source leakage current Gate threshold voltage
Static drain - source on - state resistance
Gate resistance
VDS = 600V, VGS = 0V IDSS Tj = 25°C
Tj = 125°C IGSS VGS = ±20V, VDS = 0V VGS(th) VDS = 10V, ID = 1mA
VGS = 10V, ID = 1.5A RDS(on)*5 Tj = 25°C
Tj = 125°C RG f =1MHz, open drain
Values Unit
Min. Typ. Max.
600 -
-
V
- 0.1 100 μA
-
- 1000
-
- ±100 nA
2
-
4V
- 0.90 0.98 Ω
- 1.36 -
- 16.7 -
Ω
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© 2019 ROHM Co., Ltd. All rights reserved.
2/12
20200131 - Rev.002
R6004ENX
Datasheet
lElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Forward Transfer Admittance
Input capacitance Output capacitance Reverse transfer capacitance
Effective output capacitance, energy related
Effective output capacitance, time related
Turn - on delay time Rise time Turn - off delay time Fall time
|Yfs|*5 VDS = 10V, ID = 2A
Ciss VGS = 0V Coss VDS = 25V Crss f = 1MHz
Co(er) VGS = 0V
VDS = 0V to 480V Co(tr)
td(on)*5 tr*5
td(off)*5 tf*5
VDD ⋍ 300V,VGS = 10V
ID = 2A RL ⋍ 150Ω RG = 10Ω
Values Unit
Min. Typ. Max.
1.5 3.0
-
S
- 250 -
- 250 -
pF
-
30
-
-
14
-
pF
-
57
-
-
22
-
-
22
-
ns
-
55
-
-
40
-
lGate charge characteristics (Ta = 25°C)
Parameter
Symbol
Conditions
Total gate charge Gate - Source charge Gate - Drain charge Gate plateau voltage
Qg*5 Qgs*5 Qgd*5
VDD ⋍ 300V, ID = 4A, VGS = 10V
V(plateau) VDD = 300V, ID = 4A
Values Unit
Min. Typ. Max.
-
15
-
-
2.5
-
nC
-
10
-
-
6.5
-
V
*1 Limited only by maximum channel temperature allowed. *2 Pw ≤ 10μs, Duty cycle ≤ 1% *3 L≒100mH, VDD=50V, RG=25Ω, STARTING Tj=25℃ *4 TC=25℃ *5 Pulsed
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© 2019 ROHM Co., Ltd. All rights reserved.
3/12
20200131 - Rev.002
R6004ENX
Datasheet
lBody diode electrical characteristics (Source-Drain) (Ta = 25°C)
Parameter
Symbol
Conditions
Values Unit
Min. Typ. Max.
Continuous forward current
Pulse forward current
IS*1 TC = 25℃
ISP*2
-
-
4.0
A
-
-
8.0
A
Forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
VSD*5 trr*5 Qrr*5 Irrm*5
VGS = 0V, IS = 4A
IS = 4A di/dt = 100A/μs
-
-
1.5
V
- 320 -
ns
-
2.4
-
μC
-
15
-
A
lTypical transient thermal characteristics
Symbol
Value
Unit
Rth1
0.557
Rth2
1.61
K/W
Rth3
2.24
Symbol Cth1 Cth2 Cth3
Value 0.00102 0.00898 0.440
Unit
Ws/K
.