MOSFET. FDMS8460 Datasheet

FDMS8460 Datasheet PDF, Equivalent


Part Number

FDMS8460

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS8460 Datasheet


FDMS8460 Datasheet
October 2014
FDMS8460
N-Channel Power Trench® MOSFET
40V, 49A, 2.2m:
Features
General Description
„ Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A
„ Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A
„ Advanced Package and Silicon combination for low rDS(on)
„ MSL1 robust package design
„ 100% UIL tested
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process thant has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
Application
„ DC - DC Conversion
„ RoHS Compliant
Top Bottom
Pin 1
S
S
S
G
D
D
D
D
Power 56
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25°C
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
40
±20
49
167
25
160
864
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS8460
Device
FDMS8460
Package
Power 56
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDMS8460 Rev.C4
1
www.fairchildsemi.com

FDMS8460 Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250PA, VGS = 0V
ID = 250PA, referenced to 25°C
VGS = 0V, VDS = 32V,
VGS = ±20V, VDS = 0V
Min Typ Max Units
40 V
32 mV/°C
1
±100
PA
nA
On Characteristics
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250PA
1.0 1.9 3.0
V
ID = 250PA, referenced to 25°C
-7.5 mV/°C
VGS = 10V, ID = 25A
VGS = 4.5V, ID = 21.7A
VGS = 10V, ID = 25A, TJ = 125°C
VDD = 5V, ID = 25A
2.0 2.2
2.6 3.0 m:
2.6 3.3
137 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 20V, VGS = 0V,
f = 1MHz
f = 1MHz
5415 7205
1470 1955
170 250
0.1 1.4 3.1
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VDD = 20V, ID = 25A,
VGS = 10V, RGEN = 6:
VGS = 0V to 10V
VGS = 0V to 4.5V VDD = 20V,
ID = 25A
VGS = 0V, IS = 25A
VGS = 0V, IS = 2.1A
(Note 2)
(Note 2)
IF = 25A, di/dt = 100A/Ps
19 35 ns
9 19 ns
48 78 ns
7 14 ns
78 110 nC
36 51 nC
15 nC
10 nC
0.8 1.3
0.7 1.2
V
53 85 ns
40 64 nC
NOTES:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 50°C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300Ps, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 24A, VDD = 40V, VGS = 10V
©2012 Fairchild Semiconductor Corporation
FDMS8460 Rev.C4
2
www.fairchildsemi.com


Features Datasheet pdf FDMS8460 N-Channel Power Trench® MOSFET October 2014 FDMS8460 N-Channel Powe r Trench® MOSFET 40V, 49A, 2.2m: Fea tures General Description „ Max rDS( on) = 2.2m: at VGS = 10V, ID = 25A „ M ax rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A „ Advanced Package and Silicon c ombination for low rDS(on) „ MSL1 robu st package design „ 100% UIL tested T his N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Po wer Trench® process thant has been esp ecially tailored to minimize the on-sta te resistance and yet maintain superior switching performance. Application „ DC - DC Conversion „ RoHS Compliant Top Bottom Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ra tings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Pa rameter Drain to Source Voltage Gate to Source Voltage Drain Current -Conti nuous (Package limited) -Continuous (Si licon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy P.
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