FDMS8460

FDMS8460 N-Channel Power Trench® MOSFET October 2014 FDMS8460 N-Channel Power Trench® MOSFET 40V, 49A, 2.2m: Features General Description „ Max rDS(on) = 2.2m: at VGS = 10V, ID = 25A „ Max rDS(on) = 3.0m: at VGS = 4.5V, ID = 21.7A „ Advanced Package and Silicon combination for low rDS(on) „ MSL1 robust package design „ 100% UIL tested This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process thant has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. Application „ DC - DC Conversion „ RoHS Compliant Top Bottom Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous (Package limited) -Continuous (Silicon limited) -Continuous -Pulsed TC = 25°C TC = 25°C TA = 25°C Single Pulse Avalanche Energy P...