MOSFET. FDMS86263P Datasheet

FDMS86263P Datasheet PDF, Equivalent


Part Number

FDMS86263P

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
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FDMS86263P Datasheet
FDMS86263P
P-Channel PowerTrench® MOSFET
-150 V, -22 A, 53 mΩ
Features
„ Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A
„ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A
„ Very low Rds-on in Mid-Voltage P-Channel silicon technology
optimized for low Qg
„ This product is optimised for fast switching applications as
well as load switch applications
„ 100% UIL tested
„ RoHS Compliant
October 2014
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced PowerTrench® technology. This
very high density process is especially tailored to minimize
on-state resistance and optimized for superior switching
performance.
Applications
„ Active Clamp Switch
„ Load Switch
Top Bottom
Pin 1
SS
D
S
S
GS
D
SD
D
D
D
GD
D
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
-150
±25
-22
-4.4
-70
384
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS86263P
Device
FDMS86263P
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2014 Fairchild Semiconductor Corporation
FDMS86263P Rev.C2
1
www.fairchildsemi.com

FDMS86263P Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = -250 μA, VGS = 0 V
ID = -250 μA, referenced to 25 °C
VDS = -120 V, VGS = 0 V
VGS = ±25 V, VDS = 0 V
-150
V
-116 mV/°C
-1
±100
μA
nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = -250 μA
-2 -2.9 -4
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = -250 μA, referenced to 25 °C
7 mV/°C
VGS = -10 V, ID = -4.4 A
42 53
rDS(on)
Static Drain to Source On Resistance
VGS = -6 V, ID = -4 A
45 64 mΩ
VGS = -10 V, ID = -4.4 A,TJ = 125 °C
71 94
gFS Forward Transconductance
VDS = -10 V, ID = -4.4 A
19 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = -75 V, VGS = 0 V,
f = 1 MHz
2935 3905 pF
238 315 pF
11 20 pF
0.1 2.7 5.4
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = -75 V, ID = -4.4 A,
VGS = -10 V, RGEN = 6 Ω
VGS = 0 V to -10 V
VGS = 0 V to -6 V VDD = -75 V,
ID = -4.4 A
17 31
10 21
37 59
14 25
45 63
29 40
11.3
8.9
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = -4.4 A
VGS = 0 V, IS = -2 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = -4.4 A, di/dt = 100 A/μs
-0.79
-0.75
91
287
-1.3
-1.2
146
460
V
ns
nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; P-ch: L = 3 mH, IAS = -16 A, VDD = -150 V, VGS = -10 V. 100% test at L = 0.1 mH, IAS = -52 A.
©2014 Fairchild Semiconductor Corporation
FDMS86263P Rev.C2
2
www.fairchildsemi.com


Features Datasheet pdf FDMS86263P P-Channel PowerTrench® MOSFE T FDMS86263P P-Channel PowerTrench® M OSFET -150 V, -22 A, 53 mΩ Features „ Max rDS(on) = 53 mΩ at VGS = -10 V, I D = -4.4 A „ Max rDS(on) = 64 mΩ at V GS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon techn ology optimized for low Qg „ This prod uct is optimised for fast switching app lications as well as load switch applic ations „ 100% UIL tested „ RoHS Compl iant October 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced P owerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and op timized for superior switching performa nce. Applications „ Active Clamp Switc h „ Load Switch Top Bottom Pin 1 SS D S S GS D SD D D D GD D Po wer 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drai n to Source Voltage Gate to Source Voltage Drain Current -Con.
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