FDMS86263P

FDMS86263P P-Channel PowerTrench® MOSFET FDMS86263P P-Channel PowerTrench® MOSFET -150 V, -22 A, 53 mΩ Features „ Max rDS(on) = 53 mΩ at VGS = -10 V, ID = -4.4 A „ Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A „ Very low Rds-on in Mid-Voltage P-Channel silicon technology optimized for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant October 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® technology. This very high density process is especially tailored to minimize on-state resistance and optimized for superior switching performance. Applications „ Active Clamp Switch „ Load Switch Top Bottom Pin 1 SS D S S GS D SD D D D GD D Power 56 MOSFET Maximum Ratings TA = 25 °C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Con...