FDMD82100

FDMD82100 Dual N-Channel PowerTrench® MOSFET June 2014 FDMD82100 Dual N-Channel Power Trench® MOSFET 100 V, 25 A, 19 mΩ Features General Description „ Max rDS(on) = 19 mΩ at VGS = 10 V, ID = 7 A „ Max rDS(on) = 33 mΩ at VGS = 6 V, ID = 5.5 A „ Ideal for flexible layout in primary side of bridge topology „ Termination is Lead-free and RoHS Compliant „ 100% UIL tested „ Kelvin High Side MOSFET drive pin-out capability This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Applications „ Synchronous Buck : Primary Switch of Half / Full bridge converter for telecom „ Motor Bridge : Primary Switch of Half / Full bridge converter for BLDC motor „ MV POL : 48V Synchronous Buck Switch Pin 1 Power 3.3 x 5 D1 1 D1 2 D1 3 G2 4 S2 5 S2 6 12 G1 11 G1R 10 D2/S1 9 D2/S1 8 D2/S1 7 D2/S1 MOSFET Maximum Ratings TA = 25 °...