FDMS3662 N-Channel Power Trench® MOSFET
November 2014
FDMS3662
N-Channel Power Trench® MOSFET
100V, 39A, 14.8mΩ
Features
General Description
Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A Advanced Package and Silicon combination for low rDS(on) MSL1 robust package design
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Pow...
