MOSFET. FDMS3662 Datasheet

FDMS3662 Datasheet PDF, Equivalent


Part Number

FDMS3662

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS3662 Datasheet PDF


FDMS3662 Datasheet
November 2014
FDMS3662
N-Channel Power Trench® MOSFET
100V, 39A, 14.8mΩ
Features
General Description
„ Max rDS(on) = 14.8mΩ at VGS = 10V, ID = 8.9A
„ Advanced Package and Silicon combination for low rDS(on)
„ MSL1 robust package design
This N-Channel MOSFET is produced using Fairchild
Semiconductor‘s advanced Power Trench® process that has
been especially tailored to minimize the on-state resistance and
yet maintain superior switching performance.
„ 100% UIL Tested
„ RoHS Compliant
Application
„ DC - DC Conversion
Top Bottom
Pin 1
Pin 1
S
S
S
G
D
D
D
D
Power 56
S
S
S
G
D
D
D
D
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
TC = 25°C
TA = 25°C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25°C
Power Dissipation
TA = 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
100
±20
39
8.9
90
384
104
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.2
50
°C/W
Device Marking
FDMS3662
Device
FDMS3662
Package
Power 56
Reel Size
13’’
Tape Width
12mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C3
1
www.fairchildsemi.com

FDMS3662 Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250μA, VGS = 0V
100
V
ID = 250μA, referenced to 25°C
74 mV/°C
VGS = 0V, VDS = 80V,
VGS = ±20V, VDS = 0V
1
±100
μA
nA
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250μA
ID = 250μA, referenced to 25°C
VGS = 10V, ID = 8.9A
VGS = 10V, ID = 8.9A, TJ = 125°C
VDD = 10V, ID = 8.9A
2.5
3.5
-10.8
11.4
19.0
37
4.5 V
mV/°C
14.8
mΩ
24.7
S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 50V, VGS = 0V,
f = 1MHz
f = 1MHz
3470
245
110
1.4
4620
325
165
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 50V, ID = 8.9A,
VGS = 10V, RGEN = 6Ω
VDD = 50V,
ID = 8.9A
25 40 ns
15 26 ns
32 52 ns
6 10 ns
54 75 nC
18 nC
15 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0V, IS = 8.9A (Note 2)
VGS = 0V, IS = 2.1A (Note 2)
0.8 1.3
0.7 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 8.9A, di/dt = 100A/μs
45 73 ns
71 115 nC
NOTES:
1. RθJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50°C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125°C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300μs, Duty cycle < 2.0%.
3. Starting TJ = 25°C, L = 3mH, IAS = 16A, VDD = 100V, VGS = 10V
©2009 Fairchild Semiconductor Corporation
FDMS3662 Rev.C3
2
www.fairchildsemi.com


Features Datasheet pdf FDMS3662 N-Channel Power Trench® MOSFET November 2014 FDMS3662 N-Channel Pow er Trench® MOSFET 100V, 39A, 14.8mΩ Features General Description „ Max r DS(on) = 14.8mΩ at VGS = 10V, ID = 8.9 A „ Advanced Package and Silicon combi nation for low rDS(on) „ MSL1 robust p ackage design This N-Channel MOSFET is produced using Fairchild Semiconductor ‘s advanced Power Trench® process th at has been especially tailored to mini mize the on-state resistance and yet ma intain superior switching performance. „ 100% UIL Tested „ RoHS Compliant Application „ DC - DC Conversion Top Bottom Pin 1 Pin 1 S S S G D D D D Power 56 S S S G D D D D MOSFET Maxi mum Ratings TA = 25°C unless otherwise noted Symbol VDS VGS ID EAS PD TJ, TS TG Parameter Drain to Source Voltage Gate to Source Voltage Drain Current -Continuous -Continuous -Pulsed TC = 2 5°C TA = 25°C Single Pulse Avalanche Energy Power Dissipation TC = 25°C Power Dissipation TA = 25°C Operating and Storage Junction .
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