MOSFET. FDMS7580 Datasheet

FDMS7580 Datasheet PDF, Equivalent


Part Number

FDMS7580

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS7580 Datasheet PDF


FDMS7580 Datasheet
October 2014
FDMS7580
N-Channel Power Trench® MOSFET
25 V, 7.5 m
Features
General Description
„ Max rDS(on) = 7.5 mat VGS = 10 V, ID = 15 A
„ Max rDS(on) = 11.1 mat VGS = 4.5 V, ID = 12 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology, engineered
for soft recovery
„ MSL1 robust package design
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers. It has been optimized
for low gate charge, low rDS(on), fast switching speed and body
diode reverse recovery performance.
Applications
„ Control MOSFET for Synchronous Buck Converters
„ 100% UIL tested
„ Notebook
„ RoHS Compliant
„ Server
„ Telecomm
„ High Efficiency DC-DC Switch Mode Power Supplies
Top Bottom
Pin 1
S
S
S
G
D5
D6
Power 56
D
D
DD
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 1a)
Ratings
25
±20
28
49
15
60
32
27
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
4.6
50
°C/W
Device Marking
FDMS7580
Device
FDMS7580
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2009 Fairchild Semiconductor Corporation
FDMS7580 Rev.C1
1
www.fairchildsemi.com

FDMS7580 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
BVDSS
TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 250 µA, VGS = 0 V
ID = 250 µA, referenced to 25 °C
VDS = 20 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
25 V
18 mV/°C
1 µA
100 nA
On Characteristics
VGS(th)
VGS(th)
TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 µA
ID = 250 µA, referenced to 25 °C
VGS = 10 V, ID = 15 A
VGS = 4.5 V, ID = 12 A
VGS = 10 V, ID = 15 A, TJ = 125 °C
VDD = 5 V, ID = 15 A
1.0
1.6 3.0 V
-6 mV/°C
5.9 7.5
8.3 11.1 m
8.3 10.6
63 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
894 1190 pF
277 370 pF
53 80 pF
1.1 2.2
Switching Characteristics
td(on)
tr
td(off)
tf
Qg(TOT)
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Total Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 15 A,
VGS = 10 V, RGEN = 6
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 13 V
ID = 15 A
7.3 15 ns
2.4 10 ns
17 31 ns
2.1 10 ns
14 20 nC
6.5 10 nC
2.9 nC
1.6 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 15 A
(Note 2)
(Note 2)
0.73 1.1
0.85 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 15 A, di/dt = 100 A/µs
19 34 ns
5.1 10 nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 15 A, di/dt = 300 A/µs
15 27 ns
8.9 18
NOTES:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 50 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b.125 °C/W when mounted on
a minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 µs, Duty cycle < 2.0 %.
3. EAS of 32 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 8 A, VDD = 23 V, VGS = 10 V. 100% test at L = 0.3 mH, IAS = 12 A.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
FDMS7580 Rev.C1
2
www.fairchildsemi.com


Features Datasheet pdf FDMS7580 N-Channel Power Trench® MOSFET October 2014 FDMS7580 N-Channel Pow er Trench® MOSFET 25 V, 7.5 mΩ Feat ures General Description „ Max rDS(o n) = 7.5 mΩ at VGS = 10 V, ID = 15 A „ Max rDS(on) = 11.1 mΩ at VGS = 4.5 V, ID = 12 A „ Advanced Package and S ilicon combination for low rDS(on) and high efficiency „ Next generation enha nced body diode technology, engineered for soft recovery „ MSL1 robust packag e design This N-Channel MOSFET has bee n designed specifically to improve the overall efficiency and to minimize swit ch node ringing of DC/DC converters usi ng either synchronous or conventional s witching PWM controllers. It has been o ptimized for low gate charge, low rDS(o n), fast switching speed and body diode reverse recovery performance. Applicat ions „ Control MOSFET for Synchronous Buck Converters „ 100% UIL tested „ Notebook „ RoHS Compliant „ Server „ Telecomm „ High Efficiency DC-DC Switch Mode Power Supplies Top Bottom Pin 1 S S S G D5 D6 .
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