FDMS8018

FDMS8018 N-Channel PowerTrench® MOSFET December 2015 FDMS8018 N-Channel PowerTrench® MOSFET 30 V, 175 A, 1.8 mΩ Features „ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A „ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A „ Advanced Package and Silicon Combination for Low rDS(on) and High Efficiency „ Next Generation Enhanced Body Diode Technology, Engineered for Soft Recovery „ MSL1 Robust Package Design „ 100% UIL Tested „ RoHS Compliant General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. Applications „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switching „ DC-DC Conversion „ Motor Bridge Switch Top Pin 1 Bottom Pin 1 S S S G Power 56 D D D D MOSFET...