MOSFET. FDMS8018 Datasheet

FDMS8018 Datasheet PDF, Equivalent


Part Number

FDMS8018

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS8018 Datasheet


FDMS8018 Datasheet
December 2015
FDMS8018
N-Channel PowerTrench® MOSFET
30 V, 175 A, 1.8 mΩ
Features
„ Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
„ Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 26 A
„ Advanced Package and Silicon Combination for Low rDS(on)
and High Efficiency
„ Next Generation Enhanced Body Diode Technology, Engi-
neered for Soft Recovery
„ MSL1 Robust Package Design
„ 100% UIL Tested
„ RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed ang body
diode reverse recovery performance.
Applications
„ VRM Vcore Switching for Desktop and Server
„ OringFET / Load Switching
„ DC-DC Conversion
„ Motor Bridge Switch
Top
Pin 1
Bottom
Pin 1
S
S
S
G
Power 56
D
D
D
D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
S
S
S
G
(Note 4)
(Note 6)
(Note 6)
(Note 1a)
(Note 5)
(Note 3)
(Note 1a)
D
D
D
D
Ratings
30
±20
175
110
30
680
126
83
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
1.5
50
°C/W
Device Marking
FDMS8018
Device
FDMS8018
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS8018 Rev.1.2
1
www.fairchildsemi.com

FDMS8018 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
14 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0 1.5 3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6 mV/°C
VGS = 10 V, ID = 30 A
1.5 1.8
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 26 A
1.9 2.4 mΩ
VGS = 10 V, ID = 30 A, TJ = 125 °C
2.2 2.7
gFS Forward Transconductance
VDS = 5 V, ID = 30 A
194 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
3935
1380
137
0.9
5235
1835
210
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 30 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 30 A
15
7.3
38
4.8
58
28
10.3
7.7
27
15
62
10
61
39
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 30 A
(Note 2)
(Note 2)
0.67 1.1
0.77 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30 A, di/dt = 100 A/μs
43 69 ns
25 40 nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 30 A, di/dt = 300 A/μs
34 55 ns
46 72 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 29 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. Pulsed Id please refer to Fig 11 SOA graph for more details.
6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
FDMS8018 Rev.1.2
2 www.fairchildsemi.com


Features Datasheet pdf FDMS8018 N-Channel PowerTrench® MOSFET December 2015 FDMS8018 N-Channel Powe rTrench® MOSFET 30 V, 175 A, 1.8 mΩ Features „ Max rDS(on) = 1.8 mΩ at VG S = 10 V, ID = 30 A „ Max rDS(on) = 2. 4 mΩ at VGS = 4.5 V, ID = 26 A „ Adva nced Package and Silicon Combination fo r Low rDS(on) and High Efficiency „ Ne xt Generation Enhanced Body Diode Techn ology, Engineered for Soft Recovery „ MSL1 Robust Package Design „ 100% UIL Tested „ RoHS Compliant General Descr iption This N-Channel MOSFET has been d esigned specifically to improve the ove rall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional swit ching PWM controllers.It has been optim ized for low gate charge, low rDS(on), fast switching speed ang body diode rev erse recovery performance. Applications „ VRM Vcore Switching for Desktop and Server „ OringFET / Load Switching „ DC-DC Conversion „ Motor Bridge Switc h Top Pin 1 Bottom Pin 1 S S S G Power 56 D D D D MOSFET.
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