MOSFET. FDMS8020 Datasheet

FDMS8020 Datasheet PDF, Equivalent


Part Number

FDMS8020

Description

MOSFET

Manufacture

Fairchild Semiconductor

Total Page 7 Pages
PDF Download
Download FDMS8020 Datasheet


FDMS8020 Datasheet
FDMS8020
N-Channel PowerTrench® MOSFET
30 V, 131 A, 2.5 mΩ
Features
„ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 26 A
„ Max rDS(on) = 3.6 mΩ at VGS = 4.5 V, ID = 21.5 A
„ Advanced Package and Silicon combination for low rDS(on)
and high efficiency
„ Next generation enhanced body diode technology,
engineered for soft recovery
„ MSL1 robust package design
„ 100% UIL tested
„ RoHS Compliant
May 2015
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency and to minimize switch node
ringing of DC/DC converters using either synchronous or
conventional switching PWM controllers.It has been optimized
for low gate charge, low rDS(on), fast switching speed ang body
diode reverse recovery performance.
Applications
„ VRM Vcore Switching For Desktop And Server
„ OringFET / Load Switching
„ DC-DC Conversion
„ Motor Bridge Switch
Top Bottom
Pin 1
S
S
S
G
D5
D6
4G
3S
Power 56
D
D
D
D
D7
D8
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Continuous
-Pulsed
TC = 25 °C
TC = 100 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 6)
(Note 6)
(Note 1a)
(Note 5)
(Note 3)
(Note 1a)
Ratings
30
±20
131
83
26
507
93
65
2.5
-55 to +150
Units
V
V
A
mJ
W
°C
RθJC
RθJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
FDMS8020
Device
FDMS8020
Package
Power 56
(Note 1a)
1.9
50
°C/W
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS8020 Rev. 1.3
1
www.fairchildsemi.com

FDMS8020 Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted.
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
30
V
ΔBVDSS
ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
14 mV/°C
IDSS Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V
1 μA
IGSS
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
100 nA
On Characteristics
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 250 μA
1.0 1.5 3.0
V
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Temperature Coefficient
ID = 250 μA, referenced to 25 °C
-6 mV/°C
VGS = 10 V, ID = 26 A
2.0 2.5
rDS(on)
Static Drain to Source On Resistance
VGS = 4.5 V, ID = 21.5 A
2.6 3.6 mΩ
VGS = 10 V, ID = 26 A, TJ = 125 °C
2.9 3.7
gFS Forward Transconductance
VDS = 5 V, ID = 26 A
154 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
2855
1050
115
0.9
3800
1400
175
pF
pF
pF
Ω
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 26 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 26 A
12 22 ns
5.7 12 ns
32 52 ns
4 10 ns
43 61 nC
21 29 nC
7.3 nC
6.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 2.1 A
VGS = 0 V, IS = 26 A
(Note 2)
(Note 2)
0.68 1.1
0.78 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 26 A, di/dt = 100 A/μs
37 58 ns
18 33 nC
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 26 A, di/dt = 300 A/μs
30 48 ns
36 57 nC
Notes:
1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθCA is determined by the user's board design.
a) 50 °C/W when mounted on a
1 in2 pad of 2 oz copper
b) 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Starting TJ = 25 °C; N-ch: L = 0.3 mH, IAS = 25 A, VDD = 27 V, VGS = 10 V.
4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
5. Pulsed Id please refer to SOA curve for more details.
6. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design.
©2011 Fairchild Semiconductor Corporation
FDMS8020 Rev. 1.3
2
www.fairchildsemi.com


Features Datasheet pdf FDMS8020 N-Channel PowerTrench® MOSFET FDMS8020 N-Channel PowerTrench® MOSFE T 30 V, 131 A, 2.5 mΩ Features „ Max rDS(on) = 2.5 mΩ at VGS = 10 V, ID = 2 6 A „ Max rDS(on) = 3.6 mΩ at VGS = 4 .5 V, ID = 21.5 A „ Advanced Package a nd Silicon combination for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, enginee red for soft recovery „ MSL1 robust pa ckage design „ 100% UIL tested „ RoHS Compliant May 2015 General Descriptio n This N-Channel MOSFET has been design ed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using eithe r synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed ang body diode reverse recovery performance. Applications „ V RM Vcore Switching For Desktop And Serv er „ OringFET / Load Switching „ DC-D C Conversion „ Motor Bridge Switch To p Bottom Pin 1 S S S G D5 D6 4G 3S Power 56 D D D D D7 D8.
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