FDMS7678

FDMS7678 N-Channel Power Trench® MOSFET March 2015 FDMS7678 N-Channel Power Trench® MOSFET 30 V, 26 A, 5.5 mΩ Features General Description „ Max rDS(on) = 5.5 mΩ at VGS = 10 V, ID = 17.5 A „ Max rDS(on) = 6.8 mΩ at VGS = 4.5 V, ID = 15 A „ High Performance Technology for Extremely Low rDS(on) „ Termination is Lead-Free „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Applications „ DC - DC Buck Converters „ Notebook Battery Power Management „ Load Switch in Notebook Top Pin 1 Bottom Pin 1 S S S G Power 56 D D D D S S S G D D D D MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Voltage Drai...