Document
FDMS8050 N-Channel PowerTrench® MOSFET
March 2015
FDMS8050
N-Channel PowerTrench® MOSFET
30 V, 200 A, 0.65 mΩ
Features
General Description
Max rDS(on) = 0.65 mΩ at VGS = 10 V, ID = 55 A Max rDS(on) = 0.9 mΩ at VGS = 4.5 V, ID = 47 A Advanced Package and Silicon combination for low rDS(on)
and high efficiency
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
MSL1 robust package design 100% UIL tested RoHS Compliant
Applications
OringFET Synchronous Rectifier
Top Pin 1
Bottom S Pin 1 S S G
S S
D D D D
Power 56
S G
D D D D
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol VDS VGS
ID
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Pulsed
.